bzx84c2v7bzx84c51 vishay telefunken rev. a2, 12-mar-01 1 (5) www.vishay.com document number 85606 350 mw surface mount zener diodes features planar die construction 350 mw power dissipation zener voltages from 2.7v 51v ideally suited for automated assembly processes 94 8550 order instruction type ordering code remarks bzx84c2v7 bzx84c2v7gs08 tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation on ceramic substrate 10 mmx8 mmx0.7 mm p d 350 mw zener current (see figures 13 below) junction and storage temperature range t j =t stg 55...+150 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on ceramic substrate 10 mmx8 mmx0.7 mm r thja 420 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =10 ma v f 0.9 v
bzx84c2v7bzx84c51 vishay telefunken rev. a2, 12-mar-01 2 (5) www.vishay.com document number 85606 type marking v z z zt @ i zt z zk @ i zk t c i r @ v r bzx84c... v ma ma %/ c a v @ i zt 2v7 z12/kzc 2.5 to 2.9 100 5.0 600 1.0 0.065 20 1.0 3v0 z13/kzd 2.8 to 3.2 100 5.0 600 1.0 0.060 10 1.0 3v3 z14/kze 3.1 to 3.5 95 5.0 600 1.0 0.055 5.0 1.0 3v6 z15/kzf 3.4 to 3.8 95 5.0 600 1.0 0.055 5.0 1.0 3v9 z16/kzg 3.7 to 4.1 90 5.0 600 1.0 0.050 3.0 1.0 4v3 z17/kzh 4.0 to 4.6 90 5.0 600 1.0 0.035 3.0 1.0 4v7 z1/kz1 4.4 to 5.0 80 5.0 500 1.0 0.015 4.0 2.0 5v1 z2/kz2 4.8 to 5.4 60 5.0 480 1.0 +0.005 2.0 2.0 5v6 z3/kz3 5.2 to 6.0 40 5.0 400 1.0 +0.020 1.0 2.0 6v2 z4/kz4 5.8 to 6.6 10 5.0 150 1.0 +0.030 3.0 4.0 6v8 z5/kz5 6.4 to 7.2 15 5.0 80 1.0 +0.045 2.0 4.0 7v5 z6/kz6 7.0 to 7.9 15 5.0 80 1.0 +0.050 1.0 5.0 8v2 z7/kz7 7.7 to 8.7 15 5.0 80 1.0 +0.055 0.7 5.0 9v1 z8/kz8 8.5 to 9.6 15 5.0 100 1.0 +0.065 0.5 6.0 10 z9/kz9 9.4 to 10.6 20 5.0 150 1.0 +0.065 0.2 7.0 11 y1/ky1 10.4 to 11.6 20 5.0 150 1.0 +0.070 0.1 8.0 12 y2/ky2 11.4 to 12.7 25 5.0 150 1.0 +0.075 0.1 8.0 13 y3/ky3 12.4 to 14.1 30 5.0 170 1.0 +0.080 0.1 8.0 15 y4/ky4 13.8 to 15.6 30 5.0 200 1.0 +0.080 0.05 0.7v znom 16 y5/ky5 15.3 to 17.1 40 5.0 200 1.0 +0.090 0.05 0.7v znom 18 y6/ky6 16.8 to 19.1 45 5.0 225 1.0 +0.090 0.05 0.7v znom 20 y7/ky7 18.8 to 21.2 55 5.0 225 1.0 +0.090 0.05 0.7v znom 22 y8/ky8 20.8 to 23.3 55 5.0 250 1.0 +0.090 0.05 0.7v znom 24 y9/ky9 22.8 to 25.6 70 5.0 250 1.0 +0.090 0.05 0.7v znom 27 y10/kya 25.1 to 28.9 80 2.0 300 0.5 +0.090 0.05 0.7v znom 30 y11/kyb 28 to 32 80 2.0 300 0.5 +0.090 0.05 0.7v znom 33 y12/kyc 31 to 35 80 2.0 325 0.5 +0.090 0.05 0.7v znom 36 y13/kyd 34 to 38 90 2.0 350 0.5 +0.090 0.05 0.7v znom 39 y14/kye 37 to 41 130 2.0 350 0.5 +0.110 0.05 0.7v znom 43 y15/kyf 40 to 46 150 2.0 375 0.5 +0.110 0.05 0.7v znom 47 y16/kyg 44 to 50 170 2.0 375 0.5 +0.110 0.05 0.7v znom 51 y17/kyh 48 to 54 180 2.0 400 0.5 +0.110 0.05 0.7v znom 1) device mounted on ceramic substrate 8mmx10mmx0.7mm 2) v z measured at i zt using a pulse test. i z pulse width = 5 ms. standard voltage tolerance is 5%.
bzx84c2v7bzx84c51 vishay telefunken rev. a2, 12-mar-01 3 (5) www.vishay.com document number 85606 characteristics (t j = 25 c unless otherwise specified) 0 10 20 30 40 50 0 123456 7 8910 t j =25 c 5.0ma i z-current ( ma ) z v z z-voltage ( v ) 15251 c3v9 c5v6 c6v8 c4v7 c3v3 test current i z c8v2 c2v7 figure 1. zcurrent vs. zvoltage 0 10 20 30 0 10 20 30 40 i z-current ( ma ) z v z z-voltage ( v ) 15252 t j =25 c 5.0ma test current i z 2.0ma test current i z c10 c22 c27 c33 c36 c15 c12 c18 figure 2. zcurrent vs. zvoltage 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 2.0ma test current i z i z-current ( ma ) z v z z-voltage ( v ) 15253 0 t j =25 c c39 c43 c47 c51 figure 3. zcurrent vs. zvoltage 400 see note 1 200 100 300 0 500 0 100 200 p total power dissipation ( mw ) t amb ambient temperature ( c ) 15254 tot figure 4. total power dissipation vs. ambient temperature 10 100 1000 10 100 1 c diode capacitance ( pf ) v z z-voltage ( v ) 15255 d t j =25 c v r = 1v v r = 2v v r = 2v v r = 1v figure 5. diode capacitance vs. zvoltage
bzx84c2v7bzx84c51 vishay telefunken rev. a2, 12-mar-01 4 (5) www.vishay.com document number 85606 dimensions in mm 14370 top view case: sot23, molded plastic mounting position: any approx. weight: 0.008 grams
bzx84c2v7bzx84c51 vishay telefunken rev. a2, 12-mar-01 5 (5) www.vishay.com document number 85606 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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